Jump to main content
Jump to site search


Large-area printed low-voltage organic thin film transistors via minimal-solution bar-coating

Author affiliations

Abstract

Herein, we report on the fabrication of large-area printed low-voltage organic thin film transistor arrays via minimal-solution bar-coating. We established the bar-coating of the chemically cross-linked polymer dielectric based on poly(4-vinylphenol) and 4,4′-(hexafluoroisopropylidene)diphthalic anhydride by investigating the effects of composition, reaction and printing conditions on film thickness, cross-linking efficacy, and dielectric properties. Subsequently, we elucidated various aspects of large-area (up to 4-inch wafer) bar-coated cross-linked polymeric dielectric prepared from minimal solution (∼100 μL, ∼1.2 μL cm−2) by addressing film uniformity, thickness control, capacitance variation, underlying step coverage, patternability, etc. The resultant polymeric dielectric exhibited good insulating properties as exemplified by a low leakage current density of ∼10−8 A cm−2 (at 1 MV cm−1) and a high areal capacitance of 42.6 nF cm−2. Finally, a highly-crystallized organic semiconductor layer based on 2,8-difluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene was deposited on the bar-coated cross-linked polymeric dielectric via bar-coating, leading to the realization of printed low-voltage organic transistor arrays with minimum ink solution wasted.

Graphical abstract: Large-area printed low-voltage organic thin film transistors via minimal-solution bar-coating

Back to tab navigation

Supplementary files

Article information


Submitted
01 Jul 2020
Accepted
29 Jul 2020
First published
04 Aug 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Large-area printed low-voltage organic thin film transistors via minimal-solution bar-coating

S. Sung, W. Lee, M. M. Payne, J. E. Anthony, C. Kim and M. Yoon, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC03089A

Social activity

Search articles by author

Spotlight

Advertisements