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Organic Materials as Passivation Layer for Metal Oxide Semiconductors

Abstract

Metal oxide semiconductors have gained much interest in the field of next generation consumer electronics due to the worldwide development of flexible electronic devices and strong demand for high-resolution, high-frame-rate displays. For the practical application of metal oxide thin-film transistors to the industrial level, it is crucial to secure device stability. This highlight article provides an overview on the enhanced stability of metal oxide thin-film transistors via the employment of organic materials as passivation layers. Discussions on the organic materials which are categorized into four groups include the most recent accomplishments in organic passivation for metal oxide semiconductors. The most up‐to‐date modification of the metal oxide semiconductor back channel, rationales for the employment of organic materials as passivation layer, and discussions on the mechanism of device stability enhancement are presented. Thus, this review is expected to inspire new research for future developments and applications of organic passivation layers for metal oxide semiconductors.

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Article information


Submitted
18 May 2020
Accepted
24 Jun 2020
First published
25 Jun 2020

J. Mater. Chem. C, 2020, Accepted Manuscript
Article type
Highlight

Organic Materials as Passivation Layer for Metal Oxide Semiconductors

D. Ho, H. Jeong, S. Choi and C. Kim, J. Mater. Chem. C, 2020, Accepted Manuscript , DOI: 10.1039/D0TC02379E

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