Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 25, 2020
Previous Article Next Article

Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition

Author affiliations

Abstract

Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an AlN buffer layer or nitridized sapphire as substrate is used to facilitate the GaN growth. Here, we present a low temperature atomic layer deposition (ALD) process using tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting behaviour between 130–250 °C with a growth rate of 1.4 Å per cycle. The GaN films produced were crystalline on Si (100) at all deposition temperatures with a near stochiometric Ga/N ratio with low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ∼3.42 eV and the Fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based electronic devices.

Graphical abstract: Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition

Back to tab navigation

Supplementary files

Article information


Submitted
29 Apr 2020
Accepted
22 May 2020
First published
25 May 2020

This article is Open Access

J. Mater. Chem. C, 2020,8, 8457-8465
Article type
Paper

Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition

P. Rouf, N. J. O’Brien, S. C. Buttera, I. Martinovic, B. Bakhit, E. Martinsson, J. Palisaitis, C. Hsu and H. Pedersen, J. Mater. Chem. C, 2020, 8, 8457
DOI: 10.1039/D0TC02085K

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material.

Reproduced material should be attributed as follows:

  • For reproduction of material from NJC:
    [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
  • For reproduction of material from PCCP:
    [Original citation] - Published by the PCCP Owner Societies.
  • For reproduction of material from PPS:
    [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
  • For reproduction of material from all other RSC journals:
    [Original citation] - Published by The Royal Society of Chemistry.

Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.


Social activity

Search articles by author

Spotlight

Advertisements