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Epitaxtial lift-off for freestanding InGaN/GaN membranes and vertical blue light-emitting-diodes

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Abstract

Growth substrates of InGaN/GaN light-emitting-diodes (LEDs) greatly restrict their further applications owing to the residual internal stress and polarization. Herein, we report the preparation of freestanding InGaN/GaN membranes and vertical blue LEDs through an electrochemical (EC) etching process. The maximum size of the obtained freestanding membranes are up to the millimeter scale with no obvious cracks existing. By collecting photoluminescence (PL) and Raman scattering spectra of the InGaN/GaN epitaxial structure and the transferred freestanding membranes, it is confirmed that the residual compressive strain between the epitaxial structure and growth substrate is effectively released. The corresponding electroluminescence (EL) measurement of the transferred membranes LEDs was conducted by using a probing test with a spectrograph. The EL spectra exhibiting three stable light emitting peaks and the emission intensity increase with the injected currents. This research proposes a low-cost method to fabricate freestanding InGaN/GaN membranes and high performance vertical blue LEDs.

Graphical abstract: Epitaxtial lift-off for freestanding InGaN/GaN membranes and vertical blue light-emitting-diodes

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Supplementary files

Article information


Submitted
23 Apr 2020
Accepted
20 May 2020
First published
21 May 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Epitaxtial lift-off for freestanding InGaN/GaN membranes and vertical blue light-emitting-diodes

J. Jiang, J. Dong, B. Wang, C. He, W. Zhao, Z. Chen, K. Zhang and X. Wang, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC01986K

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