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Exploiting Bandgap Engineering to Fine Control Dual-mode Lu2(Ge,Si)O5:Pr3+ Luminescent Thermometers

Abstract

It was proved quite recently that luminescence thermometry may benefit a lot utilizing the 5d→4f/4f→4f intensity ratio of Pr3+ transitions. This paper presents a comprehensive study of Lu2(Gex,Si1-x)O5:Pr phosphors in the full range of Ge concentrations (x=0–1) for luminescence thermometry. Silicon substitution by germanium allows effective managing their thermometric properties through bandgap engineering. Ge/Si ratio controls the range of temperatures within which the 5d→4f Pr3+ luminescence can be detected. This, in turn, defines the range of temperatures where the 5d→4f/4f→4f emission intensity ratio can be utilized for thermometry. Altogether, the bandgap engineering allows widening the operating range of thermometers (17-700 K), fine-tune the range of temperatures with the highest relative sensitivity, and reduce the inaccuracy of the measurements. The kinetics of the 5d→4f luminescence is also controlled by bandgap engineering and can be also used for luminescence thermometry. The Lu2(Gex,Si1-x)O5:Pr phosphors were, thus, designed as dual-mode luminescent thermometers exploiting either inter- and intra configurational intensity ratios or the 5d→4f decay time. The highest relative thermal sensitivity, 3.54 % K -1, was found at 17 K for Lu2(Ge0.75,Si0.25)O5:Pr and at 350 K for Lu2SiO5:Pr and was combined with a very low (<0.03 K) temperature uncertainty. Herein, we proved that bandgap engineering is a promising and effective approach to develop high-performance luminescence thermometers.

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Supplementary files

Article information


Submitted
21 Apr 2020
Accepted
28 Jun 2020
First published
29 Jun 2020

J. Mater. Chem. C, 2020, Accepted Manuscript
Article type
Paper

Exploiting Bandgap Engineering to Fine Control Dual-mode Lu2(Ge,Si)O5:Pr3+ Luminescent Thermometers

M. Sójka, C. D. S. Brites, L. A. D. Carlos and E. Zych, J. Mater. Chem. C, 2020, Accepted Manuscript , DOI: 10.1039/D0TC01958E

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