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Issue 30, 2020
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Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

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Abstract

An effective doping technology for the precise control of P atom injection and activation into a semiconductor substrate is presented. Polystyrene polymers with a narrow molecular weight distribution and end-terminated with a P containing moiety are used to build up a phosphorus δ-layer to be used as the dopant source. P atoms are efficiently injected into the Si substrate by high temperature (900–1250 °C) thermal treatments. Temperature dependent (100–300 K) resistivity and Hall measurements in the van der Pauw configuration demonstrate high activation rates (ηa > 80%) of injected P atoms. This bottom-up approach holds promise for the development of a mild technology for efficient doping of semiconductors.

Graphical abstract: Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

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Article information


Submitted
15 Apr 2020
Accepted
16 May 2020
First published
19 May 2020

This article is Open Access

J. Mater. Chem. C, 2020,8, 10229-10237
Article type
Paper

Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

M. Perego, F. Caruso, G. Seguini, E. Arduca, R. Mantovan, K. Sparnacci and M. Laus, J. Mater. Chem. C, 2020, 8, 10229
DOI: 10.1039/D0TC01856B

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