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Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

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Abstract

An effective doping technology for the precise control of P atom injection and activation into a semiconductor substrate is presented. Polystyrene polymers with a narrow molecular weight distribution and end-terminated with a P containing moiety are used to build up a phosphorus δ-layer to be used as the dopant source. P atoms are efficiently injected into the Si substrate by high temperature (900–1250 °C) thermal treatments. Temperature dependent (100–300 K) resistivity and Hall measurements in the van der Pauw configuration demonstrate high activation rates (ηa > 80%) of injected P atoms. This bottom-up approach holds promise for the development of a mild technology for efficient doping of semiconductors.

Graphical abstract: Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

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Article information


Submitted
15 Apr 2020
Accepted
16 May 2020
First published
19 May 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants

M. Perego, F. Caruso, G. Seguini, E. Arduca, R. Mantovan, K. Sparnacci and M. Laus, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC01856B

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