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From BiI3 to CuBiI4: a Striking Improvement in Photoelectric Performance as a Novel Photodetector Candidate

Abstract

Bismuth halide based semiconductors attract increased attention as the next generation photodetectors because of their excellent photoelectric performance, environmental-friendly and high-element-abundance characteristics. However, it is still challenging to prepare such a thin film in normal surrounding condition because of the instability character of BiI3. In this work, we use a room temperature elemental powder reaction in ambient for easy preparation of Cu incorporated perovskite-like CuBiI4 in large-scale. The crystalline and photoelectric characteristics of the resulting CuBiI4 thin films started from different Cu content have been investigated by X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence spectroscopy (PL) and transient surface photovoltage (TSPV). The CuBiI4 based photodetectors are firstly assembled, which show a striking improvement in responsivity of photodetectors compared with pure binary BiI3. Especially, the responsivity of the photodetector started with 1 : 1 molar ratio of copper and bismuth reaches 106 times larger than that with 0 : 1 initial molar ratio (pure BiI3). The possible mechanism for such an improvement was preliminarily discussed by taking advantage of the Hall Effect measurements. Our work not only provides a universal synthetic strategy for preparing high quality Bi based perovskite-like photoelectric materials, but also presents a novel Bi based photodetector materials.

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Supplementary files

Article information


Submitted
07 Mar 2020
Accepted
15 May 2020
First published
18 May 2020

J. Mater. Chem. C, 2020, Accepted Manuscript
Article type
Paper

From BiI3 to CuBiI4: a Striking Improvement in Photoelectric Performance as a Novel Photodetector Candidate

N. Qu, Y. Lei, X. Yang, X. hu, W. zhao, C. Zhao and Z. Zheng, J. Mater. Chem. C, 2020, Accepted Manuscript , DOI: 10.1039/D0TC01188F

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