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Controlled synthesis of GaSe microbelts for high-gain photodetector induced by the electron trapping effect

Abstract

GaSe microbelts was successful synthesized by using Ga/Ga2Se3 as the mixture precursors, where excess Ga was required to serve as the metal catalyst. Meanwhile, a spontaneously oxidized surface amorphous oxide (GaOx) layer was presented, which induced a built-in electric field perpendicular to the surface. Benefiting from this effect, the GaSe microbelt-based photodetector has attained a high responsivity of ~3866 AW-1 and a photoconductive gain up to ~1.06×104. This study sheds light on the controlled synthesis of microstructures and provides a device design concept for high-performance micro/nano optoelectronics.

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Supplementary files

Article information


Submitted
04 Mar 2020
Accepted
20 Mar 2020
First published
24 Mar 2020

J. Mater. Chem. C, 2020, Accepted Manuscript
Article type
Communication

Controlled synthesis of GaSe microbelts for high-gain photodetector induced by the electron trapping effect

C. Wu, H. Zhu, M. Wang, J. Kang, C. Xie, L. Wang and L. Luo, J. Mater. Chem. C, 2020, Accepted Manuscript , DOI: 10.1039/D0TC01120G

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