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Issue 20, 2020
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Construction of mixed-dimensional WS2/Si heterojunctions for high-performance infrared photodetection and imaging applications

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Abstract

Recently, high-quality large-area two-dimensional (2D) layered materials are highly desired for integrated optoelectronic devices and systems due to their unique optoelectrical properties. In this work, large size 2D WS2 films are synthesized by a simple and general sulfuration process. By virtue of excellent flexibility, a high-performance mixed-dimensional WS2/Si heterojunction with a type-II band alignment is readily fabricated for infrared detection. The as-assembled device exhibits a broad response of up to 3 μm due to the interlayer transition in the type-II heterostructure. Further optoelectronic analysis reveals a large responsivity, a high specific detectivity, and a fast response speed of the detector which are acquired upon 980 nm light illumination at zero bias. Significantly, our detector can serve as a single-pixel sensing system, displaying excellent imaging capability with a high resolution and contrast ratio. In view of these remarkable advantages, the as-fabricated WS2/Si heterojunction device has displayed great potential for applications in broadband photodetection and infrared imaging.

Graphical abstract: Construction of mixed-dimensional WS2/Si heterojunctions for high-performance infrared photodetection and imaging applications

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Supplementary files

Article information


Submitted
04 Mar 2020
Accepted
05 Apr 2020
First published
07 Apr 2020

J. Mater. Chem. C, 2020,8, 6877-6882
Article type
Paper

Construction of mixed-dimensional WS2/Si heterojunctions for high-performance infrared photodetection and imaging applications

Z. Wang, X. Zhang, D. Wu, J. Guo, Z. Zhao, Z. Shi, Y. Tian, X. Huang and X. Li, J. Mater. Chem. C, 2020, 8, 6877
DOI: 10.1039/D0TC01115K

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