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Wide band gap pyromellitic diimides for photo stable n-channel thin film transistors

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Abstract

This study reports two novel n-channel pyromellitic diimide (PyDI) derivatives, PyDI-BOCF3 and PyDI-BSCF3, with particularly wide energy gaps of 3.56 eV and 3.49 eV in the solid state, respectively, which induce the investigations of their charge transport properties, photostabilities and thin-film transparency of organic field-effect transistors (OFETs) in this work. Although PyDI-BOCF3 and PyDI-BSCF3 exhibit similar two-dimensional (2D) lamellar packing motifs, PyDI-BSCF3 demonstrates stronger electronic couplings than those of PyDI-BSCF3, suggesting it may show better electrical performance in OFETs. As predicted, PyDI-BSCF3 shows an electron mobility of 0.09 cm2 V−1 s−1 at a deposition temperature of 70 °C in ambient air, which is higher than the electron mobility of 0.058 cm2 V−1 s−1, obtained for PyDI-BOCF3. In contrast, PyDI-BOCF3 exhibits better thermal stability of mobility, which was maintained at ∼0.056 cm2 V−1 s−1 after increasing the deposition temperature from room temperature (RT) to 70 °C. More importantly, it is worth mentioning that the wide energy gaps of PyDI-BOCF3 and PyDI-BSCF3 lead to excellent photostability in OFETs at illumination conditions and optical transparency in the visible range even better than that of DPh-BTBT thin films on transparent glass and flexible PET substrates.

Graphical abstract: Wide band gap pyromellitic diimides for photo stable n-channel thin film transistors

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Article information


Submitted
19 Feb 2020
Accepted
23 Apr 2020
First published
29 Apr 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Wide band gap pyromellitic diimides for photo stable n-channel thin film transistors

J. Wang, H. Yu, T. Fu, C. Zhao, H. Yu, Z. Liu, Q. He, D. Zhang, H. Meng and W. Huang, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC00862A

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