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A novel precursor towards buffer layer materials: the first solution based CVD of zinc oxysulfide

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Abstract

We report the first solution based deposition of zinc oxysulfide, Zn(O,S), thin films via aerosol-assisted chemical vapour deposition (AACVD) facilitated by the use of a specifically designed precursor: [Zn8(SOCCH3)12S2] (1). This buffer layer material, synthesised from the dual source AACVD reaction of 1 with ZnEt2 and MeOH was analysed via X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray (EDX) analysis, scanning electron microscopy (SEM), Hall effect measurements and UV/vis spectroscopy. The film was highly transparent (>90%), conductive (ρ = 0.02998 Ω cm) and had a high charge carrier concentration (1.36 × 1019 cm−3), making it a good contendor as a buffer layer in thin film photovoltaics. In an additional study, large area films were deposited and mapped to correlate compositional variation to optoelectronic properties.

Graphical abstract: A novel precursor towards buffer layer materials: the first solution based CVD of zinc oxysulfide

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Supplementary files

Article information


Submitted
18 Feb 2020
Accepted
19 Mar 2020
First published
19 Mar 2020

This article is Open Access

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

A novel precursor towards buffer layer materials: the first solution based CVD of zinc oxysulfide

M. A. Bhide, C. J. Carmalt and C. E. Knapp, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC00840K

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