Efficient photodiode-type photodetectors with perovskite thin films derived from MAPbI3 single-crystal precursor
Perovskite photosensitive layer plays an important role on the photoelectric properties of photodetector (PD). Here, precursor solution comprising methylammonium lead iodide (MAPbI3) single-crystal is applied to prepare perovskite film to enlarge the grain size of perovskite photosensitive layer and improve the detectivity of PD device. Compared with the traditional precursor solution composed of raw-materials (MAI+PbI2), perovskite film derived from MAPbI3 single-crystal precursor possesses high crystalline quality with large grain sizes, enhanced light absorption intensity and long carrier lifetime. Thus, the PD device based on perovskite photosensitive layer derived from MAPbI3 single-crystal precursor achieves an improved responsivity of 0.633 A W−1 and an optimized detectivity of 2.502×1011 Jones under 660 nm illumination with a light intensity of 1.25 mW cm−2 at −0.4 V. This research highlights an innovative application of perovskite single-crystal for thin film devices.