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Single-Crystal Field-Effect Transistors based on a Fused-Ring Electron Acceptor with High Ambipolar Mobilities

Abstract

In this work, we successfully obtained the single crystal of a well-known fused-ring electron acceptor Y6 and realized high ambipolar charge transports in single-crystal organic field-effect transistors (SC-OFETs). These were achieved by growing the single crystal of Y6 via a simple solvent evaporation method and then using a “gold trips sticking” technique. We found that, in the single crystal structure, Y6 exhibited two isomers with chiral symmetry (M- or P-enantiomer), which were responsible for the two-dimensional porous networks. The hierarchical structures could be favorable for charge transport along π-π stacking directions, as confirmed by SC-OFETs: high ambipolar mobilities with a hole mobility of 0.84 cm2 V-1 s-1 and an electron mobility of 1.94 cm2 V-1 s-1 were obtained. This could be further used as phototransistors with a high responsivity of 1.2 × 103 A W-1 and photosensitivity of 2.1 × 104.

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Article information


Submitted
04 Feb 2020
Accepted
26 Mar 2020
First published
26 Mar 2020

J. Mater. Chem. C, 2020, Accepted Manuscript
Article type
Communication

Single-Crystal Field-Effect Transistors based on a Fused-Ring Electron Acceptor with High Ambipolar Mobilities

C. Xiao, C. Li, F. Liu, L. Zhang and W. Li, J. Mater. Chem. C, 2020, Accepted Manuscript , DOI: 10.1039/D0TC00587H

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