Single-Crystal Field-Effect Transistors based on a Fused-Ring Electron Acceptor with High Ambipolar Mobilities
In this work, we successfully obtained the single crystal of a well-known fused-ring electron acceptor Y6 and realized high ambipolar charge transports in single-crystal organic field-effect transistors (SC-OFETs). These were achieved by growing the single crystal of Y6 via a simple solvent evaporation method and then using a “gold trips sticking” technique. We found that, in the single crystal structure, Y6 exhibited two isomers with chiral symmetry (M- or P-enantiomer), which were responsible for the two-dimensional porous networks. The hierarchical structures could be favorable for charge transport along π-π stacking directions, as confirmed by SC-OFETs: high ambipolar mobilities with a hole mobility of 0.84 cm2 V-1 s-1 and an electron mobility of 1.94 cm2 V-1 s-1 were obtained. This could be further used as phototransistors with a high responsivity of 1.2 × 103 A W-1 and photosensitivity of 2.1 × 104.