Issue 16, 2020

Single-crystal field-effect transistors based on a fused-ring electron acceptor with high ambipolar mobilities

Abstract

In this study, we successfully obtained the single crystal of a well-known fused-ring electron acceptor Y6 and realized high ambipolar charge transports in single-crystal organic field-effect transistors (SC-OFETs). These were achieved by growing the single crystal of Y6via a simple solvent evaporation method and then using a “gold trips sticking” technique. We found that in the single crystal structure Y6 exhibited two isomers with a chiral symmetry (M- or P-enantiomer), which were responsible for the two-dimensional porous networks. The hierarchical structures could be favorable for charge transport along π–π stacking directions, as confirmed by SC-OFETs: high ambipolar mobilities with a hole mobility of 0.84 cm2 V−1 s−1 and an electron mobility of 1.94 cm2 V−1 s−1 were obtained. This could be further used as phototransistors with a high responsivity of 1.2 × 103 A W−1 and a photosensitivity of 2.1 × 104.

Graphical abstract: Single-crystal field-effect transistors based on a fused-ring electron acceptor with high ambipolar mobilities

Supplementary files

Article information

Article type
Communication
Submitted
04 Feb 2020
Accepted
26 Mar 2020
First published
26 Mar 2020

J. Mater. Chem. C, 2020,8, 5370-5374

Single-crystal field-effect transistors based on a fused-ring electron acceptor with high ambipolar mobilities

C. Xiao, C. Li, F. Liu, L. Zhang and W. Li, J. Mater. Chem. C, 2020, 8, 5370 DOI: 10.1039/D0TC00587H

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