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Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+ co-doped K0.5Na0.5NbO3 thin films

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Abstract

Chemical solution deposition (CSD) of K0.5Na0.5NbO3 (KNN) thin films on silicon-based substrates is an interesting technology for fabrication of lead-free ferroelectric thin films. Here, we report on improved ferroelectric and dielectric properties of KNN thin films prepared by CSD through Ca2+-doping and Ca2+–Ti4+ (CaTiO3) co-doping. Undoped KNN, 0.5 mol% Ca2+-doped and 0.5 mol% CaTiO3-doped KNN films were deposited on platinized silicon substrates by aqueous CSD. X-ray diffraction of the films as well as powders, prepared from the precursor solutions, confirmed that the three KNN materials were single phase solid solutions. A smaller grain size was observed for the doped relative to undoped KNN films. In contrast to the pure KNN films, the Ca2+- and CaTiO3-doping was observed to promote ferroelectric switching, with a low leakage current and remnant polarization of 6.37 ± 0.47 and 7.40 ± 0.09 μC cm−2 of the Ca2+- and CaTiO3-doped films, respectively. The dielectric constants of the films were among the highest measured for KNN films from CSD and span from 1800 to 3200 at 1 kHz.

Graphical abstract: Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+ co-doped K0.5Na0.5NbO3 thin films

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Supplementary files

Article information


Submitted
15 Jan 2020
Accepted
05 Mar 2020
First published
09 Mar 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+ co-doped K0.5Na0.5NbO3 thin films

N. H. Gaukås, J. Glaum, M. Einarsrud and T. Grande, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC00276C

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