Jump to main content
Jump to site search


GaAs wafers possessing facet-dependent electrical conductivity properties

Author affiliations

Abstract

Intrinsic GaAs(100) and (111) wafers were cut to expose {110} side faces for facet-specific electrical conductivity measurements. Using tungsten probes to make electrical contacts with the wafers, the {111} surface displays much larger current than the {100} and least conductive {110} surfaces, showing that facet-dependent electrical properties are also observable in GaAs crystals. Different degrees of surface band bending are used to explain the electrical facet effects. While symmetric I–V responses were collected for the {100}/{110} facet combination, asymmetric I–V curves were recorded for the {110}/{111} facet combination. Adjusted band diagrams with tunable surface band bending are presented to explain the current-rectifying behaviors. The current rectification effect can be applied to fabricate novel transistors.

Graphical abstract: GaAs wafers possessing facet-dependent electrical conductivity properties

Back to tab navigation

Supplementary files

Article information


Submitted
15 Jan 2020
Accepted
27 Feb 2020
First published
28 Feb 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

GaAs wafers possessing facet-dependent electrical conductivity properties

P. Hsieh, S. Wu, T. Liang, L. Chen and M. H. Huang, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC00265H

Social activity

Search articles by author

Spotlight

Advertisements