Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.

Issue 15, 2020
Previous Article Next Article

Field emission behaviors of CsPbI3 nanobelts

Author affiliations


In the present study, the field emission (FE) behaviors of CsPbI3 nanobelts were reported, which were synthesized via a one-step facile solvothermal method. The obtained CsPbI3 nanobelts were single crystalline in nature with a typical growth direction along [100]. It was disclosed that the valence band maximum (VBM) and conduction band minimum (CBM) vs. vacuum level of the CsPbI3 nanobelts were located at −4.86 and −2.16 eV, respectively, and their work function (Φ) was calculated to be of 3.56 eV. The as-grown CsPbI3 nanobelts exhibited outstanding field emission (FE) characteristics with a low turn-on field (Eto) of ∼2.62 V μm−1 and a high field enhancement factor of 3553, representing their potential applications in field emission display devices.

Graphical abstract: Field emission behaviors of CsPbI3 nanobelts

Back to tab navigation

Supplementary files

Article information

01 Jan 2020
06 Mar 2020
First published
06 Mar 2020

J. Mater. Chem. C, 2020,8, 5156-5162
Article type

Field emission behaviors of CsPbI3 nanobelts

Z. Du, F. Jiang, J. Zheng, S. Chen, F. Gao, J. Teng, D. Fu, H. Zhang and W. Yang, J. Mater. Chem. C, 2020, 8, 5156
DOI: 10.1039/D0TC00005A

Social activity

Search articles by author