Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.



Multifunctional and high-performance GeSe/PdSe2 heterostructure device with a fast photoresponse

Author affiliations

Abstract

Two-dimensional (2D) material based heterostructures have gained tremendous attention because of their capability and multi-functionality in electronic devices. In this work, high gate-modulated rectification in a van der Waals (vdW) heterostructure composed of p-type germanium selenide (p-GeSe) and n-type palladium diselenide (n-PdSe2) with pure ohmic contacts is introduced and examined. A large rectification ratio is extracted, up to 5.5 × 105, arising from the clean interface of p-GeSe and n-PdSe2 and low Schottky barriers. Further, the photovoltaic characteristics are measured under incident light with a wavelength λ = 532 nm and different power intensities (20–100 nW). The obtained results showed a high photoresponsivity of 1 × 103 A W−1 with an EQE of 47%. Fast rise (2 μs) and decay times (4.5 μs) are estimated. Furthermore, the heterostructure of p-GeSe/n-PdSe2 showed extraordinary performance in CMOS binary inverter and rectifier behavior. Such devices based on the TMD heterostructure may improve energy harvesting along with multifunctional logic switches.

Graphical abstract: Multifunctional and high-performance GeSe/PdSe2 heterostructure device with a fast photoresponse

Back to tab navigation

Supplementary files

Article information


Submitted
01 Jan 2020
Accepted
28 Feb 2020
First published
02 Mar 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Multifunctional and high-performance GeSe/PdSe2 heterostructure device with a fast photoresponse

A. M. Afzal, M. Z. Iqbal, S. Mumtaz and I. Akhtar, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/D0TC00004C

Social activity

Search articles by author

Spotlight

Advertisements