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High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst

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Abstract

Compared with a conventional CMOS-based optoelectronic system, two-dimensional (2D) material-based nonvolatile optoelectronic memory has attracted increasing attention because of its ability to rapidly transform optoelectronic signals, as well as simultaneously store and output signals. However, existing two-dimensional optoelectronic memory cannot meet requirements in performance and cost and so on, and needs urgently to be explored. Here we developed a high-performance nonvolatile MoS2-based optoelectronic memory device based on a MoS2 bilayer grown by a Au catalyst. The device exhibits an excellent performance index of current on/off ratio ∼8 × 104 and retention time ∼2.2 × 104 s. Experimental observations and simulation calculations have revealed that the optoelectronic memory mechanism can be ascribed to defects including S vacancies and disorder of atoms in 2D MoS2 materials.

Graphical abstract: High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst

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Supplementary files

Article information


Submitted
23 Dec 2019
Accepted
25 Jan 2020
First published
28 Jan 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Communication

High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst

F. Yang, S. Chen, H. Feng, C. Wang, X. Wang, S. Wang, Z. Zhou, B. Li, L. Ma, H. Yang, Y. Xie and Q. Liu, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/C9TC06996H

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