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Substrate dependent resistive switching in amorphous-HfOx memristors: an experimental and computational investigation

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Abstract

While two-terminal HfOx (x < 2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work, amorphous-HfOx based memristor devices on two different substrates, microscopic glass (∼1 mm) and thin SiO2 (280 nm)/Si, with different thermal conductivities in the range from 1.2 to 138 W m−1 K−1 were fabricated. Devices on glass substrates exhibit lower reset voltage, wider memory window and, in turn, a higher performance window. In addition, the devices on glass show better endurance than the devices on the SiO2/Si substrate. These devices also show non-volatile multi-level resistances at relatively low operating voltages which is critical for neuromorphic computing applications. A multiphysics COMSOL computational model is presented that describes the transport of heat, ions and electrons in these structures. The combined experimental and COMSOL simulation results indicate that the long-range thermal environment can have a significant impact on the operation of HfOx-based memristors and that substrates with low thermal conductivity can enhance switching performance.

Graphical abstract: Substrate dependent resistive switching in amorphous-HfOx memristors: an experimental and computational investigation

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Article information


Submitted
09 Dec 2019
Accepted
09 Mar 2020
First published
10 Mar 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Substrate dependent resistive switching in amorphous-HfOx memristors: an experimental and computational investigation

P. Basnet, D. G. Pahinkar, M. P. West, C. J. Perini, S. Graham and E. M. Vogel, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/C9TC06736A

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