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Issue 7, 2020
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Breakthrough in high ON-state current based on Ag–GeTe8 selectors

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Abstract

Selectors are crucial components for establishing high-density, massive, three-dimensional (3D) stackable novel non-volatile memory devices and neural networks. Although a lot of work has been done to develop new selectors, it is still considerably difficult to obtain selectors with ultra-high ON-state current to meet the actual device requirements, especially for phase change memory. In this work, by introducing a large amount of non-bonded Te anion defects, volatile large-sized Ag conductive filaments (CFs) are obtained, which will address the drawbacks of the low driving current of Ag CF-based selectors. The ON-state current of the proposed Ag–GeTe-based selector can reach a high value of 10 mA. Besides, the selector exhibits low leakage (<10−10 A), excellent nonlinearity (1.16 mV dev−1), high endurance (over 108 cycles) and excellent thermal stability. A breakthrough in the driving current based on the Ag CF selector helps to construct 3D integrated high-density devices that are immune to crosstalk problems.

Graphical abstract: Breakthrough in high ON-state current based on Ag–GeTe8 selectors

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Supplementary files

Article information


Submitted
05 Dec 2019
Accepted
03 Jan 2020
First published
06 Jan 2020

J. Mater. Chem. C, 2020,8, 2517-2524
Article type
Paper

Breakthrough in high ON-state current based on Ag–GeTe8 selectors

S. Zhang, L. Wu, Z. Song, T. Li, X. Chen, S. Yan and M. Zhu, J. Mater. Chem. C, 2020, 8, 2517
DOI: 10.1039/C9TC06673J

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