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Tailoring synaptic plasticity in a perovskite QD-based asymmetric memristor

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Abstract

Memristor devices have been of great interest over the past decade for the implementation of brain-inspired memory and computing owing to their inherent multistage memory, exquisite structure and higher integration. Herein, a CsPbBr3 QD-based protocol was constructed to exhibit analog memristive characteristics. The field-driven charge trapping/detrapping process was accelerated in the highlighted asymmetric electrode configuration to enable persistent dual direction current modulation, which serves as a basis for synaptic weight variation in the human brain. Significantly, the synaptic functions of long-term potentiation (LTP), long-term depression (LTD) and spike-timing-dependent plasticity (STDP) have been emulated on the device level. Furthermore, light signal-facilitated paired-pulse facilitation (PPF) behavior was validated with in situ atomic force microscopy (AFM) based on electrical techniques. These results may pave a new way to produce memristive devices with advanced implications for future neuromorphic computing.

Graphical abstract: Tailoring synaptic plasticity in a perovskite QD-based asymmetric memristor

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Article information


Submitted
01 Dec 2019
Accepted
30 Jan 2020
First published
02 Feb 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

Tailoring synaptic plasticity in a perovskite QD-based asymmetric memristor

Y. Gong, Y. Wang, R. Li, J. Yang, Z. Lv, X. Xing, Q. Liao, J. Wang, J. Chen, Y. Zhou and S. Han, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/C9TC06565B

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