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Tailoring synaptic plasticity in perovskite QD-based asymmetric memristor

Abstract

Memristor devices are of great interest for the implementing brain-inspired memory and computing in the past decade owing to their inherent multistage memory, exquisite structure and higher integration. Herein, CsPbBr3 QDs-based protocol was constructed to exhibit analog memristive characteristics. Field-driven charge trapping/detrapping process was accelerated in the highlighted asymmetric electrode configuration to enable persistent dual direction current modulation, which serve as a basis for synaptic weight variation in human brain. Significantly, synaptic functions of long-term potentiation (LTP), long-term depression (LTD) and spike-timing-dependent plasticity (STDP) are emulated in the device level. Furthermore, light signal facilitated paired-pulse facilitation (PPF) behavior was validated with the in situ atomic force microscopy (AFM) based on electrical techniques. These results may pave a new way to enable memristive device with advanced implications for the future neuromorphic computing.

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Supplementary files

Article information


Submitted
01 Dec 2019
Accepted
30 Jan 2020
First published
02 Feb 2020

J. Mater. Chem. C, 2020, Accepted Manuscript
Article type
Paper

Tailoring synaptic plasticity in perovskite QD-based asymmetric memristor

Y. Gong, Y. Wang, R. Li, J. Yang, Z. Lv, X. Xing, Q. Liao, J. Wang, J. Chen, Y. Zhou and S. Han, J. Mater. Chem. C, 2020, Accepted Manuscript , DOI: 10.1039/C9TC06565B

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