Tailoring synaptic plasticity in perovskite QD-based asymmetric memristor
Memristor devices are of great interest for the implementing brain-inspired memory and computing in the past decade owing to their inherent multistage memory, exquisite structure and higher integration. Herein, CsPbBr3 QDs-based protocol was constructed to exhibit analog memristive characteristics. Field-driven charge trapping/detrapping process was accelerated in the highlighted asymmetric electrode configuration to enable persistent dual direction current modulation, which serve as a basis for synaptic weight variation in human brain. Significantly, synaptic functions of long-term potentiation (LTP), long-term depression (LTD) and spike-timing-dependent plasticity (STDP) are emulated in the device level. Furthermore, light signal facilitated paired-pulse facilitation (PPF) behavior was validated with the in situ atomic force microscopy (AFM) based on electrical techniques. These results may pave a new way to enable memristive device with advanced implications for the future neuromorphic computing.