Solution-processed AgBiS2 photodetectors from molecular precursors†
Chalcogenides have attracted great attention in the past few decades because of their excellent processability and outstanding optoelectronic properties. Particularly, AgBiS2 has been the frontier of the photovoltaic field in the past few years. AgBiS2 possesses fascinating merits, such as a high absorption coefficient, suitable bandgap, decent charge transport properties and superior material stability. However, most of the efficient AgBiS2-based devices are fabricated with AgBiS2 quantum dots, which require long fabrication time and complicated synthetic steps. Moreover, most of the reports focused on photovoltaic devices, and AgBiS2-based photodetectors have not been reported yet. Based on the challenges listed above, we developed AgBiS2 photodetectors based on a molecular precursor method with a p–i–n device structure. These photodetectors exhibited broadband spectral response with decent detectivity and fast response time of 700 ns. In addition, these devices also demonstrated outstanding air, light and water stability.