Solution-processed AgBiS2 photodetectors from molecular precursors

Abstract

Chalcogenides have attracted great attention in the past few decades because of their excellent processability and outstanding optoelectronic properties. Particularly, AgBiS₂ has been the frontier of the photovoltaic field in the past few years. AgBiS₂ possesses fascinating merits, such as a high absorption coefficient, suitable bandgap, decent charge transport properties and superior material stability. However, most of the efficient AgBiS₂-based devices are fabricated with AgBiS₂ quantum dots, which require long fabrication time and complicated synthetic steps. Moreover, most of the reports focused on photovoltaic devices, and AgBiS₂-based photodetectors have not been reported yet. Based on the challenges listed above, we developed AgBiS₂ photodetectors based on a molecular precursor method with a p–i–n device structure. These photodetectors exhibited broadband spectral response with decent detectivity and fast response time of 700 ns. In addition, these devices also demonstrated outstanding air, light and water stability.