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A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction

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Abstract

A high performance p-GaN/n-ZnMgO heterojunction photodiode was demonstrated and investigated. A high quality p-GaN film was grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy and subsequently an n-ZnMgO layer was deposited on p-GaN by a metal organic chemical vapor deposition technique. The p-GaN/n-ZnMgO heterojunction photodetector shows a clear rectifying IV characteristic with a turn-on voltage of 2.5 V. At zero-bias voltage, the device shows a high peak responsivity of 196 mA W−1 at 362 nm. The 10–90% rise time and 90–10% decay time of the device can be as short as 1.7 ms and 3.3 ms, respectively. The excellent crystal quality and electrical properties of p-GaN play an important role in the high performance of the photodiode. This work provides a feasible way for the development of high-performance heterojunction self-powered UV detectors.

Graphical abstract: A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction

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Article information


Submitted
22 Nov 2019
Accepted
13 Jan 2020
First published
15 Jan 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

A high performance self-powered ultraviolet photodetector based on a p-GaN/n-ZnMgO heterojunction

Y. Zhu, K. Liu, Q. Ai, Q. Hou, X. Chen, Z. Zhang, X. Xie, B. Li and D. Shen, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/C9TC06416H

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