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A High Performance Self-powered Ultraviolet Photodetector Based on p-GaN/n-ZnMgO Heterojunction

Abstract

A high performance p-GaN/n-ZnMgO heterojunction photodiode was demonstrated and investigated. High quality p-GaN film was grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy and subsequently n-ZnMgO layer was deposited on p-GaN by metal organic chemical vapor deposition technique. The p-GaN/n-ZnMgO heterojunction photodetector shows a clear rectifying I-V characteristic with a turn-on voltage of 2.5 V. At zero-bias voltage, the device shows a high peak responsivity of 196 mA W-1 at 362 nm. 10-90% rise time and 90-10% decay time of the device can be as short as 1.7 ms and 3.3 ms, respectively. The excellent crystal quality and electrical properties of the p-GaN should play an important role for the high performance. This work provides a feasible way for the development of high-performance heterojunction self-powered UV detectors.

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Supplementary files

Article information


Submitted
22 Nov 2019
Accepted
13 Jan 2020
First published
15 Jan 2020

J. Mater. Chem. C, 2020, Accepted Manuscript
Article type
Paper

A High Performance Self-powered Ultraviolet Photodetector Based on p-GaN/n-ZnMgO Heterojunction

Y. Zhu, K. Liu, A. Qiu, Q. Hou, X. Chen, Z. Zhang, X. Xie, B. Li and D. Shen, J. Mater. Chem. C, 2020, Accepted Manuscript , DOI: 10.1039/C9TC06416H

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