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Issue 7, 2020
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Attenuating the defect activities with a rubidium additive for efficient and stable Sn-based halide perovskite solar cells

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Abstract

The oxidative instability of tin-based halide perovskites (Sn-HaP) is a culprit for inferior device performance and applications in other optoelectronic devices. Here, we have investigated the impacts of a Rb additive on the FASnI3 based device characteristics. It is observed that the RbCl additive facilitates uniform morphology with better crystal quality and suppression of oxidation of Sn2+. This results in an enhancement in the device efficiency of 3.12% for pure Sn-HaP to 5.89% for the RbCl additive with high reproducibility and superior stability. It also benefited from a higher diffusion potential and mitigation of defect activities with the RbCl additive in Sn-HaPSCs. These results corroborate that the incorporation of Rb in the FASnI3 structure plays a crucial role in improving the film growth, surface chemistry, and mitigation of trap centers.

Graphical abstract: Attenuating the defect activities with a rubidium additive for efficient and stable Sn-based halide perovskite solar cells

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Supplementary files

Article information


Submitted
12 Nov 2019
Accepted
03 Jan 2020
First published
04 Jan 2020

J. Mater. Chem. C, 2020,8, 2307-2313
Article type
Paper

Attenuating the defect activities with a rubidium additive for efficient and stable Sn-based halide perovskite solar cells

D. B. Khadka, Y. Shirai, M. Yanagida and K. Miyano, J. Mater. Chem. C, 2020, 8, 2307
DOI: 10.1039/C9TC06206H

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