Jump to main content
Jump to site search


An efficiently enhanced UV-visible light photodetector with a Zn:NiO/p-Si isotype heterojunction

Author affiliations

Abstract

A high-performance broadband photodetector based on a Zn-doped NiO/p-Si isotype heterojunction was successfully fabricated, which consisted of a Zn-doped NiO film on a Si substrate via a facile sol–gel method. The as-fabricated isotype heterojunction device displays an excellent broad-band (350–650 nm) detection performance with an outstanding external quantum efficiency (EQE) of 89.5% at a small reverse bias of −1 V and as high as ∼184% at −4 V. Moreover, the maximum photo–dark current ratio (switching ratio) of 1793% was achieved at −1 V under illumination with 650 nm light (0.5 mW cm−2); additionally, the response time of the as-fabricated device was less than 0.3 s. Such a high-performance of the Zn-doped NiO/p-Si isotype heterojunction photodetector guarantees its potential use in UV-visible low-voltage optoelectronic devices, especially for weak-signal detection and portable equipment.

Graphical abstract: An efficiently enhanced UV-visible light photodetector with a Zn:NiO/p-Si isotype heterojunction

Back to tab navigation

Supplementary files

Article information


Submitted
12 Nov 2019
Accepted
16 Jan 2020
First published
17 Jan 2020

J. Mater. Chem. C, 2020, Advance Article
Article type
Paper

An efficiently enhanced UV-visible light photodetector with a Zn:NiO/p-Si isotype heterojunction

Y. Zhang, T. Ji, R. Zou, E. Ha, X. Hu, Z. Cui, C. Xu, S. He, K. Xu, Y. Zhang and J. Hu, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/C9TC06199A

Social activity

Search articles by author

Spotlight

Advertisements