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Issue 1, 2020
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Sacrificial additive-assisted film growth endows self-powered CsPbBr3 photodetectors with ultra-low dark current and high sensitivity

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Abstract

Inorganic halide perovskite CsPbBr3 is promising for stable, high-performance self-powered photodetectors (PDs). However, solution-processed polycrystalline CsPbBr3 films generally exhibit inferior photodetection performance in contrast to single-crystal and micro-/nano-structured counterparts, primarily because of their low carrier mobility and high defect density. We propose herein a sacrificial additive-assisted CsPbBr3 film growth strategy, in which a 2-phenylethanamine iodide (PEAI) additive was firstly introduced into a CsPbBr3 precursor film and then was extracted during CsPbBr3 film crystallization by high-temperature annealing. The as-obtained CsPbBr3 film exhibits multiple advantages of full coverage, pure phase, micro-sized grains, higher crystallinity, fewer defects, and particularly a CsBr-rich surface with less conductivity, compared with the control film prepared without PEAI sacrificial additive. The resulting self-powered PD with a simple configuration of FTO/TiO2/CsPbBr3/carbon yields an ultra-low dark current of 8.05 × 10−11 A cm−2, a high R of 0.35 A W−1, a superior D* of 3.83 × 1013 Jones, and a fast response time of 1.46 μs. These figures of merit are far beyond those of the one prepared with the control film and even most of self-powered CsPbBr3 PDs reported previously. Furthermore, the optimized PD exhibits excellent operational reliability and long-term stability in an ambient air atmosphere.

Graphical abstract: Sacrificial additive-assisted film growth endows self-powered CsPbBr3 photodetectors with ultra-low dark current and high sensitivity

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Article information


Submitted
02 Oct 2019
Accepted
12 Nov 2019
First published
14 Nov 2019

J. Mater. Chem. C, 2020,8, 209-218
Article type
Paper

Sacrificial additive-assisted film growth endows self-powered CsPbBr3 photodetectors with ultra-low dark current and high sensitivity

W. Zhu, M. Deng, D. Chen, D. Chen, H. Xi, J. Chang, J. Zhang, C. Zhang and Y. Hao, J. Mater. Chem. C, 2020, 8, 209
DOI: 10.1039/C9TC05403K

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