Reply to ‘Comment on “Zero-thermal-quenching and photoluminescence tuning with the assistance of carriers from defect cluster traps”’†
In this response to the comments on our article “Zero-thermal-quenching and photoluminescence tuning with the assistance of carriers from defect cluster traps”, a series of Sr8Zn1−xSc(PO4)7:12%Tb3+ (SZ1−xSPO:12%Tb3+) phosphors were synthesized, and their photoluminescence (PL) behaviors confirmed that zinc vacancy defects played a vital role in the SZ1−xSPO:12%Tb3+ phosphor. The PL and thermal stability properties of Tb3+ ions were effectively improved, without changing the Tb3+ concentration but by the compensation from the carriers in different depth traps. The measured thermoluminescence (TL) curves further verified the existence of the shallow and deeper traps, which affiliated with oxygen and zinc vacancy defect clusters. The increase and broadened distribution of traps influenced the PL and thermal stability properties of a Tb3+ ion. All the experimental data can support our former conclusions.