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Comment on “Zero-thermal-quenching and photoluminescence tuning with assistance of carriers from defect cluster traps” by Chen et al., J. Mater. Chem. C, 2018, 6, 10687–10692

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Abstract

Chen et al. (J. Mater. Chem. C, 2018, 6, 10687–10692) reported that the emission of Tb3+ in Sr8ZnSc(PO4)7:Tb3+ shows zero-thermal-quenching behavior at high temperature (up to 200 °C), which was attributed to the compensation of the emission intensity loss by carriers from different trap depths. In this comment, we argue that this unique behavior is just an intrinsic property of Tb3+, and the strategy of sensitization by other ions like Ce3+ is needed to make Tb3+ activated luminescence materials usable for phosphor converted white LEDs.

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Article information


Submitted
10 Apr 2019
Accepted
24 Oct 2019
First published
20 Dec 2019

J. Mater. Chem. C, 2020, Advance Article
Article type
Comment

Comment on “Zero-thermal-quenching and photoluminescence tuning with assistance of carriers from defect cluster traps” by Chen et al., J. Mater. Chem. C, 2018, 6, 10687–10692

Y. Xiao and Z. Hao, J. Mater. Chem. C, 2020, Advance Article , DOI: 10.1039/C9TC01936G

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