Issue 40, 2020

Efficient and stable operation of nonfullerene organic solar cells: retaining a high built-in potential

Abstract

This work reports our research efforts to improve the operational stability of nonfullerene organic solar cells (OSCs) by retaining a stable and high built-in potential across the bulk heterojunction (BHJ). The stable built-in potential in the OSCs is realized through suppression of the interfacial reaction between the BHJ and poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS) hole transporting layer (HTL). The impact of interfacial modification, molybdenum oxide (MoO3) induced oxidation doping of the PEDOT:PSS HTL, on the operational stability of poly[(2,6-(4,8-bis(5-(2-ethylhexyl-3-fluoro)thiophen-2-yl)-benzo[1,2-b:4,5-b′]dithiophene))-alt-(5,5-(1′,3′-di-2-thienyl-5′,7′-bis(2-ethylhexyl)benzo[1′,2′-c:4′,5′-c′]dithiophene-4,8-dione))] (PBDB-T-2F): 3,9-bis(2-methylene-((3-(1,1-dicyanomethylene)-6,7-difluoro)-indanone))-5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2′,3′-d′]-s-indaceno[1,2-b:5,6-b′]dithiophene (IT-4F) nonfullerene OSCs has been analyzed. We found that the MoO3-induced oxidation doping in PEDOT:PSS can effectively suppress the interfacial chemical reactions between IT-4F and PEDOT:PSS, a recently identified major degradation mechanism in nonfullerene acceptor (NFA) with 2-(3-oxo-2,3-dihydroinden-1-ylidene)malononitrile moieties-based OSCs. Our findings highlight the importance of retaining high built-in potential to mitigate any associated degradation mechanisms, to accompany the rapid advances in the molecular synthesis of NFAs, toward enhanced operational stability of NFA-based OSCs.

Graphical abstract: Efficient and stable operation of nonfullerene organic solar cells: retaining a high built-in potential

Supplementary files

Article information

Article type
Paper
Submitted
15 Aug 2020
Accepted
02 Oct 2020
First published
03 Oct 2020

J. Mater. Chem. A, 2020,8, 21255-21264

Efficient and stable operation of nonfullerene organic solar cells: retaining a high built-in potential

Y. Wang, J. Han, L. Cai, N. Li, Z. Li and F. Zhu, J. Mater. Chem. A, 2020, 8, 21255 DOI: 10.1039/D0TA08018G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements