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Issue 24, 2020
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Bulk Pt/CsPbBr3 Schottky junctions for charge boosting in robust triboelectric nanogenerators

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Abstract

Triboelectric nanogenerators (TENGs) have attracted growing attention because they are advanced energy conversion devices to efficiently harvest low-frequency mechanical energy from nature. How to increase the permittivity of electrode materials as well as the surface charge density is technically important to improve the output performances of a robust TENG. In this study, an all-inorganic cesium lead bromide (CsPbBr3) perovskite film with semiconducting characteristics is combined with metallic nano-platinum to build bulk Pt/CsPbBr3 Schottky junctions, which are used as triboelectric electrode materials in vertical contact-separation perovskite TENGs. The systematic characterization demonstrates that the electron binding energy and dielectric properties of bulk Pt/CsPbBr3 Schottky junction tailored perovskite films are maximized by optimizing the Pt dosage. An open-circuit voltage of 273 V, a short-circuit current density of 30.3 μA cm−2 and an instantaneous maximum power density of 1295.5 mW m−2 are achieved by the champion Pt/CsPbBr3 TENG at a Pt dosage of 0.5%. A maximum energy storage of 3.96 mJ is stored in a 1 μF capacitor within a 300 s charging period. This work provides new insights into Schottky junction TENGs for enriching the fundamental principles of both halide perovskites and TENGs.

Graphical abstract: Bulk Pt/CsPbBr3 Schottky junctions for charge boosting in robust triboelectric nanogenerators

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Supplementary files

Article information


Submitted
28 Apr 2020
Accepted
24 May 2020
First published
26 May 2020

J. Mater. Chem. A, 2020,8, 11966-11975
Article type
Paper

Bulk Pt/CsPbBr3 Schottky junctions for charge boosting in robust triboelectric nanogenerators

G. Xie, X. Yang, J. Duan, Y. Duan and Q. Tang, J. Mater. Chem. A, 2020, 8, 11966
DOI: 10.1039/D0TA04463F

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