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Issue 14, 2020
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Efficient defect passivation of Sb2Se3 film by tellurium doping for high performance solar cells

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Abstract

Defects in a semiconductor dictate the carrier transport and recombination ability, which are critical factors that influence the power conversion efficiency in solar cells. In this study, we demonstrate that the introduction of tellurium is able to fine tune the atomic ratio of Se/Sb in Sb2Se3 thin films, both Se-rich and Sb-rich Sb2Se3 are obtained. Using fine-tuned device fabrication and deep level defect spectroscopy for characterization, we experimentally disclose that Se-rich Sb2Se3 favors the formation of SeSb and VSb defects, while Sb-rich films benefit the formation of SbSe and VSe defects. With an appropriate excess of Se in Sb2Se3, a net efficiency improvement of 2% is obtained when compared with pristine Sb2Se3 based solar cells. Our study provides an effective strategy to manipulate the defect formation in Sb2Se3 solar cells and inspires further improvement in the efficiency of Sb2Se3 solar cells.

Graphical abstract: Efficient defect passivation of Sb2Se3 film by tellurium doping for high performance solar cells

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Supplementary files

Article information


Submitted
11 Jan 2020
Accepted
12 Mar 2020
First published
12 Mar 2020

J. Mater. Chem. A, 2020,8, 6510-6516
Article type
Communication

Efficient defect passivation of Sb2Se3 film by tellurium doping for high performance solar cells

Y. Ma, B. Tang, W. Lian, C. Wu, X. Wang, H. Ju, C. Zhu, F. Fan and T. Chen, J. Mater. Chem. A, 2020, 8, 6510
DOI: 10.1039/D0TA00443J

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