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Electrostatic self-assembly of a AgI/Bi2Ga4O9 p–n junction photocatalyst for boosting superoxide radical generation

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Abstract

Semiconductor p–n junction engineering plays an indispensable role in developing highly efficient photocatalysts for energy conversion and environmental remediation. Herein, a novel AgI/Bi2Ga4O9 p–n junction photocatalyst is successfully constructed by an electrostatic self-assembly approach. Photoelectrochemical characterization together with density functional theory calculations shows that the formation of a p–n junction at the AgI/Bi2Ga4O9 interface favors separation and transfer of photogenerated charge carriers. The ˙O2 generated by 25%-AgI/Bi2Ga4O9 reaches a concentration of 18.8 μmol L−1 after 60 min of irradiation, which is 3.3 and 12.5 times higher than that generated by AgI and Bi2Ga4O9, providing 25%-AgI/Bi2Ga4O9 with greatly enhanced photocatalytic activity toward Acid Red 1 and metronidazole degradation. Our work provides a novel strategy for designing highly efficient photocatalysts for a wide range of energy and environmental applications.

Graphical abstract: Electrostatic self-assembly of a AgI/Bi2Ga4O9 p–n junction photocatalyst for boosting superoxide radical generation

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Article information


Submitted
15 Dec 2019
Accepted
24 Jan 2020
First published
30 Jan 2020

J. Mater. Chem. A, 2020, Advance Article
Article type
Paper

Electrostatic self-assembly of a AgI/Bi2Ga4O9 p–n junction photocatalyst for boosting superoxide radical generation

J. Liu, X. Zhang, Q. Zhong, J. Li, H. Wu, B. Zhang, L. Jin, H. B. Tao and B. Liu, J. Mater. Chem. A, 2020, Advance Article , DOI: 10.1039/C9TA13724F

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