Jump to main content
Jump to site search


Bi0.5Sb1.5Te3-based films for flexible thermoelectric devices

Author affiliations

Abstract

Bismuth antimony telluride (Bi0.5Sb1.5Te3)-based films have excellent thermoelectric (TE) properties at around room temperature. However, tremendous challenges remain for applying these materials in flexible TE devices due to their inherent brittleness and rigidity. Here we report the fabrication of flexible p-type Bi0.5Sb1.5Te3-based heterostructure films exhibiting optimized power factor and thermal conductivity values of ∼23.2 μW cm−1 K−2 and ∼0.8 W m−1 K−1, respectively, at 300 K. It is shown that the intrinsic TE parameters can be partially decoupled for this heterostructure system, in which new phases (Te and Sb2Te3 nanoinclusions) and numerous interfaces among Bi0.5Sb1.5Te3, Te, and Sb2Te3 are introduced. High mechanical durability and flexibility with less than 10% degradation in performance after 700 bending cycles (a bending radius of 5 mm) were achieved. Finally, a flexible TE generator assembled using these Bi0.5Sb1.5Te3-based heterostructure films and traditional n-type Bi2Te3 films exhibits a high power density of 897.8 μW cm−2 at a relatively small ΔT of 40 K. This result can provide insight into the scalable fabrication of high-performance flexible TE generators for energy harvesting.

Graphical abstract: Bi0.5Sb1.5Te3-based films for flexible thermoelectric devices

Back to tab navigation

Supplementary files

Article information


Submitted
01 Dec 2019
Accepted
07 Feb 2020
First published
07 Feb 2020

J. Mater. Chem. A, 2020, Advance Article
Article type
Paper

Bi0.5Sb1.5Te3-based films for flexible thermoelectric devices

H. Shang, C. Dun, Y. Deng, T. Li, Z. Gao, L. Xiao, H. Gu, D. J. Singh, Z. Ren and F. Ding, J. Mater. Chem. A, 2020, Advance Article , DOI: 10.1039/C9TA13152C

Social activity

Search articles by author

Spotlight

Advertisements