Issue 71, 2020, Issue in Progress

Comparison of NiOx thin film deposited by spin-coating or thermal evaporation for application as a hole transport layer of perovskite solar cells

Abstract

We compared nickel oxide (NiOx) deposited by thermal evaporation and that deposited by the spin-coating process, for use in the hole transport layers of inverted planar perovskite solar cells (PSCs). Spin-coating deposition for NiOx HTL has been widely used, owing to its simplicity, low cost, and high efficiency. However, the spin-coating process has a technical limit to depositing a large-area uniformly. In contrast, thermal evaporation fabrication has a low price and is able to produce uniform and reproducible thin film. Hence, the chemical states, energy band alignment, surface morphologies, and microstructures of NiOx deposited by spin coating and thermal evaporation were analyzed. The PSC with NiOx HTL deposited by thermal evaporation showed a higher power conversion efficiency of 16.64% with open circuit voltage 1.07 V, short circuit current density of 20.68 mA cm−2, and a fill factor of 75.51% compared to that of PSC with spin-coated NiOx. We confirmed that thermal evaporation can deposit NiOx to give a better performance as a HTL with higher reproducibility than spin-coating.

Graphical abstract: Comparison of NiOx thin film deposited by spin-coating or thermal evaporation for application as a hole transport layer of perovskite solar cells

Supplementary files

Article information

Article type
Paper
Submitted
15 Oct 2020
Accepted
23 Nov 2020
First published
08 Dec 2020
This article is Open Access
Creative Commons BY license

RSC Adv., 2020,10, 43847-43852

Comparison of NiOx thin film deposited by spin-coating or thermal evaporation for application as a hole transport layer of perovskite solar cells

S. Kim, H. Seok, D. Kim, D. Choi, S. Nam, S. Kim and H. Kim, RSC Adv., 2020, 10, 43847 DOI: 10.1039/D0RA08776A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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