Issue 55, 2020, Issue in Progress

Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

Abstract

We report the enhanced charge storage characteristics of ultrananocrystalline diamond (UNCD) by contact electrification-induced hydrogenation. The non-catalytic hydrogenation of UNCD films was achieved by using platinum as an electron donor and sulfuric acid as a hydrogen proton donor, confirmed by Raman spectroscopy and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). Chemical treatment with only a H2SO4 solution is responsible for the surface oxidation. The oxidation of UNCD resulted in an increase in the quantity and duration of the tribocharges. After non-catalytic hydrogenation, the generation of friction-induced tribocharges was enhanced and remained for three hours and more. We show that the hydrogen incorporation on grain boundaries is responsible for the improvement of charge storage capability, because the doped hydrogen acts as a trap site for the tribocharges. This lab-scale and succinct method can be utilized to control charge trap capability in nanoscale memory electronics.

Graphical abstract: Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

Supplementary files

Article information

Article type
Paper
Submitted
20 Jun 2020
Accepted
02 Sep 2020
First published
08 Sep 2020
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2020,10, 33189-33195

Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

J. Kim, K. Panda and J. Y. Park, RSC Adv., 2020, 10, 33189 DOI: 10.1039/D0RA05409G

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