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Strain-engineering enables reversible semiconductor–metal transition of skutterudite IrAs3

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Abstract

Strain engineering is a more effective and green method to achieve the nonmetal-to-metal transition than metal doping. The elastic strain field can effectively change the atomic orbital interaction, achieving the metallization of materials. Taking IrAs3 as a prototype, the strain–stress behaviors of binary skutterudite are investigated. A reversible semiconductor-to-metal (SM) transition can be easily achieved by only an ∼9% strain. The strain-induced Jahn–Teller effect of IrAs6 octahedra and the breakage of As4-rings dominate the metallization. Unexpectedly, the metal element Ir in IrAs3 becomes an electron acceptor due to its higher electronegativity and the effect of the octahedral field.

Graphical abstract: Strain-engineering enables reversible semiconductor–metal transition of skutterudite IrAs3

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Article information


Submitted
07 Oct 2019
Accepted
07 Dec 2019
First published
09 Dec 2019

Inorg. Chem. Front., 2020, Advance Article
Article type
Research Article

Strain-engineering enables reversible semiconductor–metal transition of skutterudite IrAs3

Y. Liu, D. Li, F. Tian, D. Duan, B. Liu and T. Cui, Inorg. Chem. Front., 2020, Advance Article , DOI: 10.1039/C9QI01295H

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