Jump to main content
Jump to site search


Flexible low-power source-gated transistors with solution-processed metal-oxide semiconductors

Abstract

Source-gated transistors (SGTs) with Schottky barriers have emerged as extraordinary candidates for constructing low-power electronics by virtue of device simplicity, high gain, and low operation voltages. In this work, we demonstrate flexible low-power SGTs with solution processed In2O3 channel and Al2O3 gate dielectric on ultrathin polymer substrates, exhibiting light area density (0.56 mg cm-2), low subthreshold swing (102 mV dec-1), low operation voltage (<2 V), fast saturation behaviors (0.2 V), and low power consumption (46.3 μW cm-2). These achievements pave the way for employing the unconventional SGTs in wearable applications where low-power dissipation and high mechanical flexibility are essential.

Back to tab navigation

Supplementary files

Article information


Submitted
26 Aug 2020
Accepted
03 Oct 2020
First published
06 Oct 2020

Nanoscale, 2020, Accepted Manuscript
Article type
Communication

Flexible low-power source-gated transistors with solution-processed metal-oxide semiconductors

D. Li, M. Zhao, K. Liang, H. Ren, Q. Wu, H. Wang and B. Zhu, Nanoscale, 2020, Accepted Manuscript , DOI: 10.1039/D0NR06177H

Social activity

Search articles by author

Spotlight

Advertisements