Direct Electron-beam Patterning of Monolayer MoS2 with Ice
Two-dimensional transition metal dichalcogenides (TMDCs) are seen as strong competitors in the field of next generation semiconductor materials. In this paper, we propose direct electron-beam patterning of monolayer MoS2 inspired by emerging ice lithography technique. Compared to conventional resist-based nanofabrication, ice-assisted patterning is free of contaminations from polymer resist and allows in-situ processing of MoS2. Effects of electron beam dose and energy are investigated and nanoribbons with width below 30 nm are attainable. This method is expected to be applicable to other TMDCs, providing a promising alternative for nanofabrication of 2D material devices.