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Issue 37, 2020

Revealing the origin of dislocations in Pb1−xSb2x/3Se (0 < x ≤ 0.07)

Author affiliations

Abstract

Defect engineering is an effective route to improve the performance of thermoelectric materials, including Sb doped PbSe, but the formation mechanism of defects remains unclear. In the thermoelectric material Pb1−xSb2x/3Se (0 < x ≤ 0.07), a large number of dislocations have been reported, and they enhance intermediate-frequency phonon scattering, thereby improving the zT value. However, the microstructural origin of dislocations remains unclear. In this paper, via a combination of atomic resolution scanning transmission electron microscopy and density functional theory, we successfully revealed the microstructure of Pb1−xSb2x/3Se (x = 0–0.07) for in-depth understanding of the formation mechanism of dislocations. Plenty of zinc blende (ZB) nanostructures are found in the PbSe matrix with a rock salt (RS) structure, and the theoretical calculations confirm its viability from the point of view of formation energy. A similar ZB structure is identified in the dislocation cores of Sb-doped materials as well, and thus the formation mechanism of dislocations is discussed for this PbSe system. This result provides important guidance to understand the structural evolution in compounds with a RS structure, especially in high-performance lead chalcogenide thermoelectric materials.

Graphical abstract: Revealing the origin of dislocations in Pb1−xSb2x/3Se (0 < x ≤ 0.07)

Supplementary files

Article information


Submitted
19 Jul 2020
Accepted
24 Aug 2020
First published
25 Aug 2020

Nanoscale, 2020,12, 19165-19169
Article type
Paper

Revealing the origin of dislocations in Pb1−xSb2x/3Se (0 < x ≤ 0.07)

P. Nan, Y. Chang, Z. Chen, Y. Pei, Y. Zhang, Y. Wang and B. Ge, Nanoscale, 2020, 12, 19165 DOI: 10.1039/D0NR05382A

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