Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.



Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2

Author affiliations

Abstract

High contact resistance (Rc) limits the ultimate potential of two-dimensional (2-D) materials for future devices. To resolve the Rc problem, forming metallic 1T phase MoS2 locally in the semiconducting 2H phase MoS2 has been successfully demonstrated to use the 1T phase as source/drain electrodes in field effect transistors (FETs). However, the long-term stability of the 1T phase MoS2 still remains as an issue. Recently, an unusual thickness-modulated phase transition from semiconducting to metallic has been experimentally observed in 2-D material PtSe2. Metallic multilayer PtSe2 and semiconducting monolayer PtSe2 can be used as source/drain electrodes and channel, respectively, in FETs. Here, we present a theoretical study on the intrinsic lower limit of Rc in the metallic-semiconducting PtSe2 heterostructure through density functional theory (DFT) combined with non-equilibrium Green's function (NEGF). Compared with Rc in the 1T–2H MoS2 heterostructure, the multilayer-monolayer PtSe2 heterostructure can offer much lower Rc due to the better capability of providing more transmission modes.

Graphical abstract: Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2

Back to tab navigation

Supplementary files

Article information


Submitted
16 Apr 2020
Accepted
15 Jun 2020
First published
15 Jun 2020

Nanoscale, 2020, Advance Article
Article type
Paper

Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2

E. Yang, J. E. Seo, D. Seo and J. Chang, Nanoscale, 2020, Advance Article , DOI: 10.1039/D0NR03001E

Social activity

Search articles by author

Spotlight

Advertisements