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Issue 21, 2020
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In situ TEM observation of the vapor–solid–solid growth of <00[1 with combining macron]> InAs nanowires

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Abstract

In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed <00[1 with combining macron]> InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor–solid–solid mechanism. Importantly, the growth of <00[1 with combining macron]> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor–solid–solid growth and clarified the growth mechanism of <00[1 with combining macron]> III–V nanowires, which provides pathways in controlling the growth of <00[1 with combining macron]> semiconductor nanowires.

Graphical abstract: In situ TEM observation of the vapor–solid–solid growth of <00 [[1 with combining macron]] > InAs nanowires

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Supplementary files

Article information


Submitted
12 Apr 2020
Accepted
11 May 2020
First published
12 May 2020

Nanoscale, 2020,12, 11711-11717
Article type
Paper

In situ TEM observation of the vapor–solid–solid growth of <00[1 with combining macron]> InAs nanowires

Q. Sun, D. Pan, M. Li, J. Zhao, P. Chen, W. Lu and J. Zou, Nanoscale, 2020, 12, 11711
DOI: 10.1039/D0NR02892D

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