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In situ TEM observation of the vapour-solid-solid growth of <00-1> InAs nanowires


In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, real-time in situ heating investigation was carried out on Au-catalyzed <00-1> InAs nanowires. It was found that the Au catalysts maintained in the solid form during the nanowire growth and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapour-solid-solid mechanism. Importantly, the growth of <00-1> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This work provides direct insights into the vapour-solid-solid growth and clarified the growth mechanism of <00-1> III-V nanowires, which provides pathways in controlling the growth of <00-1> semiconductor nanowires.

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Article information

12 Apr 2020
11 May 2020
First published
12 May 2020

Nanoscale, 2020, Accepted Manuscript
Article type

In situ TEM observation of the vapour-solid-solid growth of <00-1> InAs nanowires

Q. Sun, D. Pan, M. Li, J. Zhao, P. Chen, W. Lu and J. Zou, Nanoscale, 2020, Accepted Manuscript , DOI: 10.1039/D0NR02892D

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