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In situ TEM observation of the vapour-solid-solid growth of <00-1> InAs nanowires

Abstract

In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, real-time in situ heating investigation was carried out on Au-catalyzed <00-1> InAs nanowires. It was found that the Au catalysts maintained in the solid form during the nanowire growth and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapour-solid-solid mechanism. Importantly, the growth of <00-1> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This work provides direct insights into the vapour-solid-solid growth and clarified the growth mechanism of <00-1> III-V nanowires, which provides pathways in controlling the growth of <00-1> semiconductor nanowires.

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Supplementary files

Article information


Submitted
12 Apr 2020
Accepted
11 May 2020
First published
12 May 2020

Nanoscale, 2020, Accepted Manuscript
Article type
Paper

In situ TEM observation of the vapour-solid-solid growth of <00-1> InAs nanowires

Q. Sun, D. Pan, M. Li, J. Zhao, P. Chen, W. Lu and J. Zou, Nanoscale, 2020, Accepted Manuscript , DOI: 10.1039/D0NR02892D

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