In situ TEM observation of the vapour-solid-solid growth of <00-1> InAs nanowires
In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, real-time in situ heating investigation was carried out on Au-catalyzed <00-1> InAs nanowires. It was found that the Au catalysts maintained in the solid form during the nanowire growth and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapour-solid-solid mechanism. Importantly, the growth of <00-1> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This work provides direct insights into the vapour-solid-solid growth and clarified the growth mechanism of <00-1> III-V nanowires, which provides pathways in controlling the growth of <00-1> semiconductor nanowires.
- This article is part of the themed collection: 2020 Nanoscale HOT Article Collection