Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.



Ultrafast plasmonic lasing from a metal/semiconductor interface

Author affiliations

Abstract

To date, plasmonic nanowire lasers mostly adopt hybrid plasmonic waveguides, while there is a lack of study in terms of the confinement effect and the corresponding ultrafast dynamics of non-hybridized plasmonic lasers. Here, we report ultrafast plasmonic nanowire lasers composed of a single CH3NH3PbBr3 nanowire on a silver film without any insulating layer at room temperature. The non-hybridized plasmonic nanowire lasers exhibit ultrafast lasing dynamics with around 1.9 ps decay rate and 1 ps peak response time. Such values are among the best ones ever reported. Interestingly, the threshold of the non-hybridized plasmonic nanowire lasers is in the same order as that of their hybrid counterparts. The low threshold is due to the ultra-flat single-crystal silver films and high-quality single-crystal perovskite nanowires. The non-hybridized plasmonic lasing in CH3NH3PbBr3 nanowires originates from the stimulated emission of an electron–hole plasma based on our experiments. This work deepens the understanding of non-hybridized plasmonic lasers and paves the way to design electric pump plasmonic lasers by getting rid of insulating layers.

Graphical abstract: Ultrafast plasmonic lasing from a metal/semiconductor interface

Back to tab navigation

Supplementary files

Article information


Submitted
23 Mar 2020
Accepted
21 May 2020
First published
21 May 2020

Nanoscale, 2020, Advance Article
Article type
Communication

Ultrafast plasmonic lasing from a metal/semiconductor interface

J. Wang, X. Jia, Z. Wang, W. Liu, X. Zhu, Z. Huang, H. Yu, Q. Yang, Y. Sun, Z. Wang, S. Qu, J. Lin, P. Jin and Z. Wang, Nanoscale, 2020, Advance Article , DOI: 10.1039/D0NR02330B

Social activity

Search articles by author

Spotlight

Advertisements