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Issue 20, 2020
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High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

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Abstract

Ferroelectric HfO2 is a promising material for new memory devices, but significant improvement of its important properties is necessary for practical application. However, previous literature shows that a dilemma exists between polarization, endurance and retention. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that high crystalline quality sub-5 nm Hf0.5Zr0.5O2 capacitors, integrated epitaxially with Si(001), present combined high polarization (2Pr of 27 μC cm−2 in the pristine state), endurance (2Pr > 6 μC cm−2 after 1011 cycles) and retention (2Pr > 12 μC cm−2 extrapolated at 10 years) using the same poling conditions (2.5 V). This achievement is demonstrated in films thinner than 5 nm, thus opening bright possibilities in ferroelectric tunnel junctions and other devices.

Graphical abstract: High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

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Supplementary files

Article information


Submitted
18 Mar 2020
Accepted
28 Apr 2020
First published
29 Apr 2020

This article is Open Access

Nanoscale, 2020,12, 11280-11287
Article type
Paper

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

J. Lyu, T. Song, I. Fina and F. Sánchez, Nanoscale, 2020, 12, 11280
DOI: 10.1039/D0NR02204G

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