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Large Excitonic Effect on van der Waals Interaction between Two-Dimensional Semiconductors

Abstract

An exceptionally large excitonic effect on the van der Waals (vdW) interaction between two-dimensional semiconductors is unraveled using the Lifshitz theory in conjunction with the ab initio GW plus Bethe-Salpeter equation formalism. Upon consideration of the electron-hole interaction, the vdW energy between two atomistic layers separated by 10000 angstrom can be larger by a ratio of ~30%, which is an order of magnitude greater than that seen for semi-infinite silicon surfaces. The large influence of the short-range electron-hole interaction on the long-range effect of quantum fluctuations is rooted in the ultra-thin nature of two-dimensional semiconductor which results in not only large exciton binding energy but also amplified role of low-frequency dielectric responses.

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Article information


Submitted
17 Mar 2020
Accepted
18 May 2020
First published
19 May 2020

Nanoscale, 2020, Accepted Manuscript
Article type
Paper

Large Excitonic Effect on van der Waals Interaction between Two-Dimensional Semiconductors

J. Yang, X. Liu and W. Guo, Nanoscale, 2020, Accepted Manuscript , DOI: 10.1039/D0NR02152K

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