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Issue 20, 2020
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Synthesis of large-area uniform Si2Te3 thin films for p-type electronic devices

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Abstract

Two-dimensional (2D) p–n junctions are basic components of various functional devices. However, the shortage of natural p-type 2D semiconductors makes it difficult to achieve both p-type and n-type transport in high-performance multifunctional devices. Here, continuous and uniform p-type Si2Te3 thin films are grown on SiO2/Si substrates, which are simultaneously used as an in situ Si source. Large-size 2D films with dimensions of ∼8 × 2 cm2 are prepared for the first time using a reliable and simple chemical vapor deposition (CVD) technique. Film growth occurs via the vapor–liquid–solid mechanism, allowing the film thickness to be controlled by the substrate temperature. As the Si2Te3 film thickness increases from 3 to 8 nm, the bandgap decreases from 2.07 to 1.65 eV. Moreover, the directly grown thin films possess high crystallinity, showing electronic properties that are comparable to those of MoTe2 crystals and MoS2 films. Therefore, this large-area growth of p-type Si2Te3 enriches the 2D semiconductor library and opens up a new platform for the study of p-type Si2Te3, which has potential for application in p–n junctions.

Graphical abstract: Synthesis of large-area uniform Si2Te3 thin films for p-type electronic devices

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Supplementary files

Article information


Submitted
29 Feb 2020
Accepted
13 Apr 2020
First published
14 Apr 2020

Nanoscale, 2020,12, 11242-11250
Article type
Paper

Synthesis of large-area uniform Si2Te3 thin films for p-type electronic devices

X. Song, Y. Ke, X. Chen, J. Liu, Q. Hao, D. Wei and W. Zhang, Nanoscale, 2020, 12, 11242
DOI: 10.1039/D0NR01730B

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