The Mechanism of Modulation of Electronic Anisotropy in Two-dimensional ReS2
Although the anisotropy and even strategies for modulation of the anisotropy have been widely reported in ReS2, a comprehensive study on the inherent electronic anisotropy of ReS2 is still absent to date, therefore, the mechanism of anisotropy evolution is ambiguous as well. In this work, we conduct a systematically investigation on the evolution of electronic anisotropy in bilayer ReS2, under the modulation of varied charge doping and temperatures. It is found that the adjustability of electronic anisotropy is largely attributed to the different scattering from angle-dependent defects or vacancies in low doping level. At high doping level, in contrast, the inherent electronic anisotropy can be recovered by filling the traps to attenuate the influence of scattering. This work renders insights into the exploration of electronic anisotropy in 2D materials.