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Interlayer Coupling Prolonged Photogenerated Carrier Lifetime in Few Layered Bi2OS2 Semiconductors

Abstract

Layered semiconductors with broad photoabsorption, long carrier lifetime and high carrier mobility are of crucial importance for high-performance optoelectronic and photovoltaic devices, whereas it is hard to satisfy these requirements simultaneously in a system due to the opposite dependence on layer thickness. Herein, by means of ab initio time-domain nonadiabatic molecular dynamic simulations, we find a new mechanism in Bi2OS2 nanosheet inducing an anomalous layer-dependent property of carrier lifetimes, which makes the few layered Bi2OS2 a possible system for fulfilling above requirements concurrently. It is revealed that the interlayer dipole-dipole interaction in few layered Bi2OS2 effectively breaks the two-fold degenerate orbitals of [BiS2] layers, which not only cuts down the overlap of the electron and hole wave functions, but also accelerates electron decoherence process. This significantly suppresses the electron-hole recombination and prolongs the photogenerated carrier lifetime in few layered Bi2OS2. The mechanism unveiled here paves a possible way for developing advanced optoelectronic and photovoltaic devices through engineering interlayer dipole-dipole coupling.

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Article information


Submitted
16 Jan 2020
Accepted
10 Feb 2020
First published
10 Feb 2020

Nanoscale, 2020, Accepted Manuscript
Article type
Paper

Interlayer Coupling Prolonged Photogenerated Carrier Lifetime in Few Layered Bi2OS2 Semiconductors

X. Niu, G. Wu, X. Zhang and J. Wang, Nanoscale, 2020, Accepted Manuscript , DOI: 10.1039/D0NR00447B

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