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Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity

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Abstract

Due to its excellent electrical and optical properties, tin selenide (SnSe), a typical candidate of two-dimensional (2D) semiconductors, has attracted great attention in the field of novel optoelectronics. However, the large-area growth of high-quality SnSe films still remains a great challenge, which limits their practical applications. Here, wafer-size SnSe ultrathin films with high uniformity and crystallization were deposited via a scalable magnetron sputtering method. The results showed that the SnSe photodetector was highly sensitive to a broad range of wavelengths in the UV-visible-NIR range, especially showing an extremely high responsivity of 277.3 A W−1 with the corresponding external quantum efficiency of 8.5 × 104% and detectivity of 7.6 × 1011 Jones. These figures of merits are among the best performances for the sputter-fabricated 2D photodetector devices. The photodetecting mechanisms based on a photogating effect induced by the trapping effect of localized defects are discussed in detail. The results indicate that the few-layered SnSe films obtained from sputtering growth have great potential in the design of high-performance photodetector arrays.

Graphical abstract: Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity

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Article information


Submitted
11 Jan 2020
Accepted
09 Mar 2020
First published
09 Mar 2020

Nanoscale, 2020, Advance Article
Article type
Paper

Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity

L. Hao, Y. Du, Z. Wang, Y. Wu, H. Xu, S. Dong, H. Liu, Y. Liu, Q. Xue, Z. Han, K. Yan and M. Dong, Nanoscale, 2020, Advance Article , DOI: 10.1039/D0NR00319K

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